PART |
Description |
Maker |
KMM372F3200CS1 KMM372F3280CS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新,3.3
|
Samsung Semiconductor Co., Ltd.
|
M372F3200DJ3-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V 32M × 72配置,带ECC DRAM的内存使6Mx4K
|
Samsung Semiconductor Co., Ltd.
|
M374F3200DJ1-C M374F3280DJ1-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
Samsung semiconductor
|
M372F32080DJ4-CEDOMODE |
32M x 72 DRAM DIMM with ECC Using 16M x 4, 4K & 8K Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
KMM372V3200BS1 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
KMM372F410CK KMM372F410CS KMM372F400CS KMM372F400C |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KMM372C804BS |
8M x 72 DRAM DIMM with ECC using 4M16, 4K Refresh, 5V
|
Samsung Electronic Samsung semiconductor
|
KMM372C804BS |
8M x 72 DRAM DIMM with ECC using 4M16, 4K Refresh, 5V
|
Samsung semiconductor
|
KMM372C883CS KMM372C803CK KMM372C883CK KMM372C803C |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HMD16M72D9A-13 HMD16M72D9A-F13 HMD16M72D9A-F12 HMD |
Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit),带ECC内存的基础6Mx8BanksK的参考。,3.3 Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit),带ECC内存的基础16Mx8BanksK的参考。,3.3
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
HCPMEM-512 |
EDO DRAM Board 512Mbyte ( 32M x 144-Bit ) organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC EDO公司的DRAM局512Mbyte2M的144位)筹办8Mx144K的参Banks。,3.3伏,环境保护运动委员
|
Hanbit Electronics Co.,Ltd.
|
HSD32M72D18P-10 HSD32M72D18P-10L HSD32M72D18P-12 H |
Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|